发明名称 |
METHOD FABRICATING A PHASE-CHANGE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A method of fabricating a phase-change semiconductor memory device includes a plasma treatment of an electrode connected to a phase-change material pattern after a conductive layer used to form the electrode has been planarized in the presence of an oxidizing agent. The plasma is formed from a plasma gas having a molecular weight of 17 or less. |
申请公布号 |
US2011312126(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113084647 |
申请日期 |
2011.04.12 |
申请人 |
BAE BYOUNG-JAE;CHOI BYOUNG-DEOG;PARK JEONG-HEE;KIM YOUNG-KUK;OH JIN-HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE BYOUNG-JAE;CHOI BYOUNG-DEOG;PARK JEONG-HEE;KIM YOUNG-KUK;OH JIN-HO |
分类号 |
H01L21/06;H01L21/02 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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