| 摘要 |
A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting device stack and the substrate, within the light-emitting device stack, and/or between the light-emitting device stack and a metal contact layer in an end-type contact. |
