发明名称 |
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES |
摘要 |
A semiconductor device includes a substrate, an NMOSFET and a PMOSFET disposed on the substrate, a first stress nitride layer pattern having a tensile stress and disposed On the NMOSFET, an interface oxynitride layer pattern having a first compressive stress and disposed on the PMOSFET and a second stress nitride layer pattern disposed on the interface oxynitride layer pattern and having a second compressive stress whose magnitude is greater than the magnitude of the first compressive stress. |
申请公布号 |
US2011309452(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113157351 |
申请日期 |
2011.06.10 |
申请人 |
JEONG YONGKUK;YU HYUN-KWAN;KIM KI-EUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG YONGKUK;YU HYUN-KWAN;KIM KI-EUN |
分类号 |
H01L27/092;H01L21/31 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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