发明名称 |
CLEANING METHOD OF PROCESSING CHAMBER OF MAGNETIC FILM, MANUFACTURING METHOD OF MAGNETIC DEVICE, AND SUBSTRATE TREATMENT APPARATUS |
摘要 |
The present invention provides a manufacturing method of a multilayer film, a manufacturing method of a magnetoresistance effect device, and a substrate treatment apparatus, capable of shortening the time of a cleaning step. In one embodiment of the present invention, the inside of an etching apparatus is cleaned by plasma of a mixed gas containing H2 gas and O2 gas between processes. This shortens the cleaning time to improve the productivity. |
申请公布号 |
US2011308544(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113069635 |
申请日期 |
2011.03.23 |
申请人 |
OSADA TOMOAKI;ERNULT FRANCK;CANON ANELVA CORPORATION |
发明人 |
OSADA TOMOAKI;ERNULT FRANCK |
分类号 |
B08B7/00;C23F1/08 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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