发明名称 CLEANING METHOD OF PROCESSING CHAMBER OF MAGNETIC FILM, MANUFACTURING METHOD OF MAGNETIC DEVICE, AND SUBSTRATE TREATMENT APPARATUS
摘要 The present invention provides a manufacturing method of a multilayer film, a manufacturing method of a magnetoresistance effect device, and a substrate treatment apparatus, capable of shortening the time of a cleaning step. In one embodiment of the present invention, the inside of an etching apparatus is cleaned by plasma of a mixed gas containing H2 gas and O2 gas between processes. This shortens the cleaning time to improve the productivity.
申请公布号 US2011308544(A1) 申请公布日期 2011.12.22
申请号 US201113069635 申请日期 2011.03.23
申请人 OSADA TOMOAKI;ERNULT FRANCK;CANON ANELVA CORPORATION 发明人 OSADA TOMOAKI;ERNULT FRANCK
分类号 B08B7/00;C23F1/08 主分类号 B08B7/00
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