SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a new structure that can maintain memory contents for a long period without supply of electric power and has no limitation in the number of times of data writing.

SOLUTION: The semiconductor device comprises: a plurality of memory cells including a first transistor and a second transistor; a reading circuit including an amplifier circuit and a switching element; and a refresh control circuit. A first channel formation region and a second channel formation region are principally composed of different materials respectively. A first gate electrode and one of a second source electrode and a second drain electrode are electrically connected, the other one of the second source electrode and the second drain electrode is electrically connected with one of input terminals of the amplifier circuit, and an output terminal of the amplifier circuit is connected with the other one of the second source electrode and the second drain electrode via the switching element. A conducting state or non-conducting state of the switching element is controlled by the refresh control circuit.

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