发明名称 |
CRYSTAL SILICON PROCESSES AND PRODUCTS |
摘要 |
Crystal silicon processes and products (100) are disclosed. In any exemplary embodiment, a biaxially textured metal substrate (110) was fabricated by the Rolling-Assisted Biaxially Textured Substrate (RABiTS) process. Electron beam evaporation was used to grow buffer layers (120) heteroepitaxially on the metal substrate (110) as a buffer layer (120). After growth of the buffer layer (120), a silicon layer was grown using hot wire chemical vapor deposition (HWCVD). The silicon film had the same grain size as the underlying metal substrate (110). In addition, the orientation of these grains matched the orientations of the underlying metal substrate (110).
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申请公布号 |
US2011308615(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US200913148925 |
申请日期 |
2009.02.12 |
申请人 |
TEPLIN CHARLES W.;BRANZ HOWARD M;HEATHERLY LEE;PARANTHAMAN MARIAPPAN PARANS;ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
TEPLIN CHARLES W.;BRANZ HOWARD M;HEATHERLY LEE;PARANTHAMAN MARIAPPAN PARANS |
分类号 |
H01L31/0256;B32B9/04;C30B25/02;C30B25/18;H01L21/20;H01L31/036;H01L31/18 |
主分类号 |
H01L31/0256 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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