<p>Disclosed is a manufacturing method of a SiC semiconductor device having improved performance. The disclosed manufacturing method of a SiC semiconductor device involves the following steps. A SiC semiconductor is prepared having a first surface at least one part of which is injected with impurities (S1-S3). A second surface is formed by cleaning the first surface of the Sic semiconductor (S4). A film containing Si is formed on the second surface (S5). By oxidizing the film containing Si, an oxide film is formed which configures the SiC semiconductor device (S6).</p>
申请公布号
WO2011158534(A1)
申请公布日期
2011.12.22
申请号
WO2011JP54333
申请日期
2011.02.25
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.;ITOH, SATOMI;SHIOMI, HIROMU;NAMIKAWA, YASUO;WADA, KEIJI;SHIMAZU, MITSURU;HIYOSHI, TORU