SILICON CARBIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide substrate which can reduce on-resistance, and to provide a substrate with an epitaxial layer, a semiconductor device and a method of manufacturing a silicon carbide substrate.

SOLUTION: The silicon carbide substrate 10 having a principal face comprises an SiC single crystal substrate 1 formed at least partially on the principal face, and a base member 20 arranged to surround the periphery of the SiC single crystal substrate 1. The base member 20 includes a boundary region 11 and an underlying region 12. The boundary region 11 is contiguous to the SiC single crystal substrate 1 in the direction along the principal face, and has a grain boundary internally. The underlying region 12 is contiguous to the SiC single crystal substrate 1 in the direction perpendicular to the principal face, and has an impurity concentration higher than that in the SiC single crystal substrate 1.

COPYRIGHT: (C)2012,JPO&INPIT