SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A vertical super junction MOSFET (101) and a lateral MOSFET (102) are integrated on a same semiconductor substrate. The lateral MOSFET (102) is electrically isolated from the vertical super junction MOSFET (101) by an n-type buried isolation layer (15) and an n-type diffused isolation layer (16). The lateral MOSFET (102) is composed of: a p-type well region (17) which is formed in an n--type semiconductor layer (2) that is surrounded by the n-type buried isolation layer (15) and the n-type diffused isolation layer (16); an n-type source region (18) and an n-type drain region (19) that are formed in the p-type well region (17); and a gate electrode (21) which covers a portion that is sandwiched between the n-type source region (18) and the n-type drain region (19) in the p-type well region (17). Since the n-type buried isolation layer (15) and an n-type layer (3) of the vertical super junction MOSFET (101) are formed at the same time, the cost can be reduced. In addition, parasitic operation between the elements can be suppressed by the n-type buried isolation layer (15).