发明名称 |
DIFFERENTIALLY RECESSED CONTACTS FOR MULTI-GATE TRANSISTOR OF SRAM CELL |
摘要 |
A complementary metal-oxide-semiconductor static random access memory cell that includes a plurality of P-channel multi-gate transistors and a plurality of N-channel multi-gate transistors. Each transistor includes a gate electrode and source and drain regions separated by the at least one gate electrode. The SRAM cell further includes a plurality of contacts formed within the source and drain regions of at least one transistor. A plurality of contacts of at least one transistor are recessed a predetermined recess amount, wherein a resistance of the at least one transistor is varied based upon the predetermined recess amount. |
申请公布号 |
US2011309448(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US20100816825 |
申请日期 |
2010.06.16 |
申请人 |
CHANG JOSEPHINE B.;CHANG LELAND;LIN CHUNG-HSUN;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;CHANG LELAND;LIN CHUNG-HSUN;SLEIGHT JEFFREY W. |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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