FORMATION METHOD FOR SILICON OXYNITRIDE FILM, AND SUBSTRATE HAVING SILICON OXYNITRIDE FILM MANUFACTURED USING SAME

摘要

The present invention provides a silicon oxynitride film manufacturing method capable of reducing energy costs, and a substrate having a silicon oxynitride film manufactured using the manufacturing method. The method comprises the following: a coating film is formed on the surface of a substrate by coating the surface of the substrate with a film-forming composition containing a polysilazane compound; excess solvent contained in the coating film is removed; and after the solvent has been removed from the coating film, the coating film is exposed to ultraviolet radiation under temperature conditions below 150?.