PROCESS FOR PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE

摘要

Each of first and second material substrates (11, 12) both made from single crystalline silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are bound to a support (30). The first and second side surfaces face to each other through a gap having an opening between the first and second front surfaces. A sealing part (70) for sealing the gap is formed on the opening. A sublimated material from the first and second side surfaces is deposited on the sealing part (70) to form a bonding part (BDa) for sealing the opening. The sealing part (BDa) is removed. In this manner, silicon carbide single crystals can be grown on the first and second front surfaces.