摘要 |
<p>Disclosed is a method for manufacturing a thin film, wherein the film is stably formed at high efficiency using a nozzle-type evaporation source, while eliminating scattering and deposition of an unnecessary film-forming material after completion of film formation. The film is formed in a state wherein the open plane (14) of the evaporation source (19) that holds the heated film-forming material is in proximity to a substrate (21), while releasing air from an evaporation chamber (16) and a film-forming chamber (17) without partitioning the evaporation chamber (16) and the film-forming chamber (17) from each other by means of a variable conductance structure (34). Then, pressure in both the chambers is adjusted to predetermined pressure or more by introducing a nonreactive gas into the evaporation chamber (16) and the film-forming chamber (17), and after suppressing evaporation of the film-forming material, the open plane (14) is brought far from the substrate (21) by moving the evaporation source (19) by means of a moving mechanism (35), both the chambers are partitioned from each other by operating the variable conductance structure, and the film-forming material is cooled, while continuously introducing the nonreactive gas into the evaporation chamber (16).</p> |
申请人 |
PANASONIC CORPORATION;HONDA, KAZUYOSHI;BESSHO, KUNIHIKO;SHIMADA, TAKASHI |
发明人 |
HONDA, KAZUYOSHI;BESSHO, KUNIHIKO;SHIMADA, TAKASHI |