BIPOLAR SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a bipolar semiconductor element in which control capability by a control electrode can be enhanced.

SOLUTION: A gate turnoff thyristor has second and third gate terminals 16 and 17 formed in second and third contact holes 20C and 20D on the end side extending in the row direction along each row R1, R2 on the end side thereof, in addition to a first gate terminal 15 formed in a first contact hole 20B between rows extending in the row direction between two adjoining rows R1 and R2 of mesa type anode-emitter layer 5. Since commutation during turnoff can be born by the first gate terminal 15 between rows and the second and third gate terminals 16 and 17 on the end side, irregular commutation can be minimized.

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