Graphene/Nanostructure FET with Self-Aligned Contact and Gate

摘要

A method for forming a field effect transistor (FET) includes depositing a channel material on a substrate, the channel material comprising one of graphene or a nanostructure; forming a gate over a first portion of the channel material; forming spacers adjacent to the gate; depositing a contact material over the channel material, gate, and spacers; depositing a dielectric material over the contact material; removing a portion of the dielectric material and a portion of the contact material to expose the top of the gate; recessing the contact material; removing the dielectric material; and patterning the contact material to form a self-aligned contact for the FET, the self-aligned contact being located over a source region and a drain region of the FET, the source region and the drain region comprising a second portion of the channel material.