METHOD AND APPARATUS FOR CHEMICAL-MECHANICAL PLANARIZATION

摘要

A method and apparatus for performing chemical-mechanical planarization (CMP) is disclosed, which in one embodiment includes a CMP tool for polishing a semiconductor wafer. The CMP tool includes a slurry mixture that has slurry beads. The slurry beads are formed of a polymer material. The slurry beads are used to remove summits and non-uniformities on the semiconductor wafer. In some embodiments the CMP tool includes a counter-face that replaces the polishing pad of a conventional CMP tool. In some embodiments the counter-face is made of polycarbonate. In another embodiment a slurry mixture for use with a CMP tool is disclosed. The slurry mixture includes slurry beads, where each of the slurry beads has a diameter of between 0.1 and 1000 microns, or in some embodiments a diameter of between 10 and 50 microns.