发明名称 |
Methods Of Manufacturing Three-Dimensional Semiconductor Devices |
摘要 |
Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer. |
申请公布号 |
US2011312174(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113165256 |
申请日期 |
2011.06.21 |
申请人 |
LEE JAEGOO;YOU BYUNGKWAN;PARK YOUNGWOO;SEOL KWANG SOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAEGOO;YOU BYUNGKWAN;PARK YOUNGWOO;SEOL KWANG SOO |
分类号 |
H01L21/3205;H01L21/31 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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