发明名称 Flash Memory Device and Program Method Thereof
摘要 A nonvolatile memory device that includes first and second storage areas, and a control logic configured to control the first and second storage areas, wherein when a program operation of the first storage area is passed before a program operation of the second storage area is passed, the control logic completes the program operation of the first storage area and continues the program operation of the second storage area is provided.
申请公布号 US2011310668(A1) 申请公布日期 2011.12.22
申请号 US201113224101 申请日期 2011.09.01
申请人 PARK JIN-SUNG 发明人 PARK JIN-SUNG
分类号 G11C16/10;G11C16/08 主分类号 G11C16/10
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