发明名称 |
STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER |
摘要 |
A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure. |
申请公布号 |
US2011309446(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US20100816399 |
申请日期 |
2010.06.16 |
申请人 |
DORIS BRUCE B.;CHENG KANGGUO;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;CHENG KANGGUO;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G. |
分类号 |
H01L27/12;H01L21/336;H01L21/8238;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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