发明名称 |
Capacitors Integrated with Metal Gate Formation |
摘要 |
A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate and a MIM capacitor over the substrate. The MIM capacitor includes a bottom plate, an insulating layer over the bottom plate, and a top plate over the insulating layer. The semiconductor structure further includes a MOS device including a gate dielectric over the substrate and a metal-containing gate electrode free from polysilicon on the gate dielectric, wherein the metal-containing gate electrode is formed of a same material and has a same thickness as the bottom plate. |
申请公布号 |
US2011309420(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113215988 |
申请日期 |
2011.08.23 |
申请人 |
CHANG CHUNG-LONG;LU DAVID DING-CHUNG;CHEN CHIA-YI;WU I-LU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHUNG-LONG;LU DAVID DING-CHUNG;CHEN CHIA-YI;WU I-LU |
分类号 |
H01L27/07 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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