发明名称 SEQUENTIAL-WRITE, RANDOM-READ MEMORY
摘要 In one embodiment, a method includes, in response to assertion of a write-enable signal at a memory array that comprises a plurality of words, sequentially and at a first clock frequency writing data to the memory array starting at a beginning of the memory array until the memory array is full. The method includes, independent of the writing of data to the memory array, asynchronously and at a second clock frequency that is slower than the first clock frequency reading data from the memory array based on read addresses received at the memory array.
申请公布号 US2011310692(A1) 申请公布日期 2011.12.22
申请号 US20100819082 申请日期 2010.06.18
申请人 MCLEOD SCOTT;WALKER WILLIAM W.;FUJITSU LIMITED 发明人 MCLEOD SCOTT;WALKER WILLIAM W.
分类号 G11C8/04 主分类号 G11C8/04
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