| 摘要 |
<p>The present invention relates to a dual-film structure FTO production method, and the invention comprises the steps of: heating a substrate to between 400 and 500 degrees; producing flat FTO by spraying a precursor containing Sn onto the heated substrate; heating the flat FTO film to at least between 500 and 550 degrees; and forming an FTO nanorod layer by spraying a precursor containing Sn onto the heated FTO substrate. A characterising feature of the present invention is that a polycrystalline FTO film is formed in the bottom part, and a nanorod FTO layer is formed by being grown on the polycrystalline FTO film.</p> |
