OPTICAL ENERGY-CROSSLINKABLE INSULATING LAYER MATERIAL FOR ORGANIC THIN FILM TRANSISTOR, OVERCOAT INSULATING LAYER, AND ORGANIC THIN FILM TRANSISTOR

摘要

Disclosed is an insulating layer material for an organic thin film transistor, which enables the production of an organic thin film transistor that has a threshold voltage with a small absolute value. Specifically disclosed is an insulating layer material for an organic thin film transistor, which contains a polymer compound (A) that has a repeating unit containing a fluorine atom and another repeating unit containing a functional group that absorbs optical energy or electron beam energy and causes a dimerization reaction.