发明名称 NANOWIRE LED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.</p>
申请公布号 CA2802539(A1) 申请公布日期 2011.12.22
申请号 CA20112802539 申请日期 2011.06.17
申请人 GLO AB 发明人 LOWGREN, TRULS
分类号 H01L33/04;B82B3/00;H01L33/22 主分类号 H01L33/04
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