| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing polycrystalline silicon in which the exhaust heat can be recovered with a useful high-temperature medium and in which impurities from the reactor wall can be restrained. <P>SOLUTION: In the apparatus for producing polycrystalline silicon, raw gas including a silicon compound is introduced into a reactor 1, and simultaneously, an electric current is supplied to silicon core rods 4 in the reactor 1 so as to heat the silicon core rods 4, whereby polycrystalline silicon is deposited on surfaces of the silicon core rods 4 and grown to rods. A bell jar 3 of the reactor 1 has a jacket structure for cooling a peripheral wall 31, and a boiling two-phase flow of water and water vapor as a cooling medium is passed through a space 3a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
