| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem that a light-emitting element cannot be formed when graphite is used as a substrate on which a nitride semiconductor thin film of GaN, or the like, is formed because a GaN thin film becomes polycrystal and defects increase in the crystal. <P>SOLUTION: On a graphite substrate 101 provided with an amorphous carbon layer 102, a c-axis orientation film of an AIN layer 103 is grown by an MOCVD method. A low temperature growth buffer layer 104 and a first n-type GaN layer 105 are then sequentially grown epitaxially on the AIN layer 103, and a mask layer 106 having an opening is formed on the first n-type GaN layer 105. Thereafter, a second n-type GaN layer 107, a multilayer quantum well layer 108 consisting of In<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N and GaN, a p-type GaN layer 109, and a p-type GaN contact layer 110 are sequentially grown epitaxially on the first n-type GaN layer 105 from the opening of the mask layer 106. <P>COPYRIGHT: (C)2012,JPO&INPIT |
