发明名称 METHOD FOR DEPOSITING FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for depositing a film, which can suppress the change of a refractive index with the elapse of time when an MgF<SB POS="POST">2</SB>thin film is deposited by a sputtering method. <P>SOLUTION: The method for depositing the film includes: a first film deposition step of protruding at least one part of the MgF<SB POS="POST">2</SB>in a molecule state and depositing a film using the MgF<SB POS="POST">2</SB>in the molecule state on a substrate 102 by sputtering the MgF<SB POS="POST">2</SB>131 with the surface temperature maintaining between 650&deg;C and 1,100&deg;C while introducing gas containing at least one of oxygen and nitrogen; and a second film deposition step of depositing a metal oxide on the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011256442(A) 申请公布日期 2011.12.22
申请号 JP20100132841 申请日期 2010.06.10
申请人 OLYMPUS CORP 发明人 FUJIWARA TAKUYA
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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