发明名称 |
TECHNIQUES FOR PLASMA PROCESSING A SUBSTRATE |
摘要 |
Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration. |
申请公布号 |
US2011309049(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113157005 |
申请日期 |
2011.06.09 |
申请人 |
PAPASOULIOTIS GEORGE D.;HADIDI KAMAL;MAYNARD HELEN L.;GODET LUDOVIC;SINGH VIKRAM;MILLER TIMOTHY J.;LINDSAY BERNARD;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
PAPASOULIOTIS GEORGE D.;HADIDI KAMAL;MAYNARD HELEN L.;GODET LUDOVIC;SINGH VIKRAM;MILLER TIMOTHY J.;LINDSAY BERNARD |
分类号 |
C23F1/00;C23C14/06;C23C14/48;C23C16/505;H05H1/46 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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