发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and a barrier auxiliary unit installed between the substrate support and the barrier, wherein the barrier auxiliary unit is installed at places other than standby spaces of the end effectors.
申请公布号 US2011311339(A1) 申请公布日期 2011.12.22
申请号 US201113163165 申请日期 2011.06.17
申请人 YASUI TAKESHI;HIROCHI YUKITOMO;TAKANO SATOSHI;HORII RITSUO;KAWABATA MAKOTO;HITACHI KOKUSAI ELECTRIC INC. 发明人 YASUI TAKESHI;HIROCHI YUKITOMO;TAKANO SATOSHI;HORII RITSUO;KAWABATA MAKOTO
分类号 H01L21/677 主分类号 H01L21/677
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