发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and a barrier auxiliary unit installed between the substrate support and the barrier, wherein the barrier auxiliary unit is installed at places other than standby spaces of the end effectors.
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申请公布号 |
US2011311339(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113163165 |
申请日期 |
2011.06.17 |
申请人 |
YASUI TAKESHI;HIROCHI YUKITOMO;TAKANO SATOSHI;HORII RITSUO;KAWABATA MAKOTO;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YASUI TAKESHI;HIROCHI YUKITOMO;TAKANO SATOSHI;HORII RITSUO;KAWABATA MAKOTO |
分类号 |
H01L21/677 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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