RESISTIVE RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A resistive random access memory (RRAM) device and a manufacturing method thereof are provided. The RRAM device includes a memory unit which is disposed between a bit line and a word line. The memory unit includes a resistive element (40) and a Schottky diode (30). The Schottky diode (30) is connected to the resistive element (40) in series. Therein the Schottky diode (30) includes a metal layer and a semiconductor layer, which contact each other, and the interface between the metal layer and the semiconductor layer is a non-planar shape. The RRAM device can reduce the area occupied on the chip and supply a high drive current, therefore the storage density is enhanced.