| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which occurrence of a not-yet-opened hole pattern is reduced by reducing variation in hole pattern size. <P>SOLUTION: The method of manufacturing a semiconductor device includes first and second resist patterning steps. In the first resist patterning step, a first resist pattern 11 having an opening pattern 111 is formed in a contact hole formation region. In the second resist patterning step, a second resist pattern 12 having an opening pattern 112 in the first region R1 of the contact hole formation region, and having a third opening pattern 112 in the second region R2 is formed. The second and third opening patterns 112 have such a shape as they are arranged on every other active region 3, and they are formed on active regions 3 different from each other. In the first or second resist patterning step conducted at first, insolubilization treatment of resist exhibiting tolerance in the following lithography processing is performed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
