发明名称 |
Photoelectric Conversion Device and Manufacturing Method Thereof |
摘要 |
A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.
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申请公布号 |
US2011308591(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113161947 |
申请日期 |
2011.06.16 |
申请人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
H01L31/0232;H01L31/0236;H01L31/06;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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