发明名称 Photoelectric Conversion Device and Manufacturing Method Thereof
摘要 A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.
申请公布号 US2011308591(A1) 申请公布日期 2011.12.22
申请号 US201113161947 申请日期 2011.06.16
申请人 YAMAZAKI SHUNPEI;ARAI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;ARAI YASUYUKI
分类号 H01L31/0232;H01L31/0236;H01L31/06;H01L31/18 主分类号 H01L31/0232
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