发明名称 Forming A Semiconductor Package Including A Thermal Interface Material
摘要 In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.
申请公布号 US2011312131(A1) 申请公布日期 2011.12.22
申请号 US201113221392 申请日期 2011.08.30
申请人 RENAVIKAR MUKUL;SUH DAEWOONG;DEPPISCH CARL;GUPTA ABHISHEK 发明人 RENAVIKAR MUKUL;SUH DAEWOONG;DEPPISCH CARL;GUPTA ABHISHEK
分类号 H01L21/50;H01L21/60 主分类号 H01L21/50
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