发明名称 |
ELEVATION OF TRANSISTOR CHANNELS TO REDUCE IMPACT OF SHALLOW TRENCH ISOLATION ON TRANSISTOR PERFORMANCE |
摘要 |
Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel diffusions are not suppressed; preferably they have an elevation that is at least as high as that of the diffusion regions. |
申请公布号 |
US2011309453(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113221747 |
申请日期 |
2011.08.30 |
申请人 |
MOROZ VICTOR;PRAMANIK DIPANKAR;LIN XI-WEI |
发明人 |
MOROZ VICTOR;PRAMANIK DIPANKAR;LIN XI-WEI |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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