发明名称 |
SENSOR USING FERROELECTRIC FIELD-EFFECT TRANSISTOR |
摘要 |
An embodiment is a method and apparatus to sense strain or pressure. A ferroelectric field effect transistor (feFET) structure has a semiconductor layer and a ferroelectric dielectric layer. The feFET structure is capable of sensing strain or pressure. One disclosed feature of the embodiments is a method to fabricate a strain or pressure sensor. A circuit is printed to form a ferroelectric field effect transistor (feFET) structure having a ferroelectric dielectric layer and a semiconductor layer. The feFET structure is capable of sensing strain or pressure. |
申请公布号 |
US2011309415(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US20100818999 |
申请日期 |
2010.06.18 |
申请人 |
NG TSE NGA;KIST RENE JAN PETER;SAMBANDAN SANJIV;PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
NG TSE NGA;KIST RENE JAN PETER;SAMBANDAN SANJIV |
分类号 |
H01L29/84;H01L21/336 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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