METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for manufacturing a SiC semiconductor device, which is provided with: a step (S4) of forming a first oxide film on the first surface of a SiC semiconductor; a step (S5) of removing the first oxide film; and a step (S6) of forming, on the second surface of the SiC semiconductor, a second oxide film that constitutes the SiC semiconductor device, said second surface being exposed by the removal of the first oxide film. Between the step (S4) of removing the first oxide film and the step (S6) of forming the second oxide film, the SiC semiconductor is disposed in an atmosphere isolated from the ambient atmosphere.