发明名称 TEXTURED SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for fabricating textured single crystals used for epitaxial growth of metal nitride in connection with fabrication of light-emitting diodes (LEDs). <P>SOLUTION: A method for fabricating textured single crystals includes forming pads 12 with a metal layer 11 coated on a surface of a single crystal 10 by thermal processing. Then, a silica protective layer is deposited on the pads and etching is performed with a first compound through a micro hole 13 of the protective layer to rapidly melt the metal pad to form a hollow cavity 15 having a volume corresponding to the metal pad. Then, the surface is etched with a second compound to form a texture cavity 16. Next, the silica protective layer is removed by etching with HF to yield a desired textured single crystal 17. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011258947(A) 申请公布日期 2011.12.22
申请号 JP20110120629 申请日期 2011.05.30
申请人 SAINT GOBAIN CRISTO & DETECTEURS 发明人 FABIEN RIAN ALTO;GUILLAUME LUCAS;FRANCOIS JULIAN VERMEERSCH
分类号 H01L21/306;C30B25/18;C30B29/38;H01L21/308;H01L33/22 主分类号 H01L21/306
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