| 摘要 |
A semiconductor device includes a semiconductor integrated circuit device (1). In the semiconductor integrated circuit device (1), a semiconductor integrated circuit (5) is formed on a center of the surface of a semiconductor substrate (3), and a plurality of electrode terminals (71, 73, . . . ) are provided on the surface of the semiconductor substrate (3). A protection film (9) is provided on the surface of the semiconductor substrate (3) such that the surfaces of the electrode terminals (71, 73) are exposed. The electrode terminals (71, 73, . . . ) include an electrode terminal (73) having a thin portion (74). The surface of the thin portion (74) is located below the surfaces of the electrode terminals except for the electrode terminal (73) having the thin portion (74) among the electrode terminals (71, 73, . . . ).
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