发明名称 |
METHOD FOR PASSIVATING A SILICON SURFACE |
摘要 |
A method of passivating a silicon surface is disclosed. In one aspect, the method includes cleaning the silicon surface by subjecting the silicon surface to a sequence of steps wherein the final step is a chemical oxidation step resulting in a hydrophilic silicon surface. The method may also include drying the cleaned silicon surface using an advanced drying technique, and/or depositing an oxide layer on the silicon surface.
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申请公布号 |
US2011308603(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113163466 |
申请日期 |
2011.06.17 |
申请人 |
VERMANG BART;ROTHSCHILD AUDE;BEARDA TWAN;KATHOLIEKE UNIVERSITEIT LEUVEN;IMEC |
发明人 |
VERMANG BART;ROTHSCHILD AUDE;BEARDA TWAN |
分类号 |
H01L31/0216;H01L21/31 |
主分类号 |
H01L31/0216 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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