发明名称 METHOD FOR PASSIVATING A SILICON SURFACE
摘要 A method of passivating a silicon surface is disclosed. In one aspect, the method includes cleaning the silicon surface by subjecting the silicon surface to a sequence of steps wherein the final step is a chemical oxidation step resulting in a hydrophilic silicon surface. The method may also include drying the cleaned silicon surface using an advanced drying technique, and/or depositing an oxide layer on the silicon surface.
申请公布号 US2011308603(A1) 申请公布日期 2011.12.22
申请号 US201113163466 申请日期 2011.06.17
申请人 VERMANG BART;ROTHSCHILD AUDE;BEARDA TWAN;KATHOLIEKE UNIVERSITEIT LEUVEN;IMEC 发明人 VERMANG BART;ROTHSCHILD AUDE;BEARDA TWAN
分类号 H01L31/0216;H01L21/31 主分类号 H01L31/0216
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