发明名称 FIELD EFFECT ORGANIC TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a field effect organic transistor that is driven with lower voltage compared with one in which high dielectric particles contained in a gate insulating layer are not unevenly distributed to the gate electrode side. <P>SOLUTION: A field effect organic transistor includes a substrate, a gate electrode, a gate insulating layer, a channel layer, a source electrode, and a drain electrode. The channel layer is an organic semiconductor layer, the gate insulating layer includes high dielectric particles and insulative resin, and the high dielectric particles are unevenly distributed to the gate electrode side. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011258894(A) 申请公布日期 2011.12.22
申请号 JP20100134379 申请日期 2010.06.11
申请人 FUJI XEROX CO LTD 发明人 SHITAYA HIROSHI;MITSUI MINORU
分类号 H01L29/786;H01L21/28;H01L21/283;H01L51/05;H01L51/30 主分类号 H01L29/786
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