| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of suppressing deterioration in characteristics of a photoelectric conversion film. <P>SOLUTION: A solid-state imaging device comprises: a first electrode film; a first photoelectric conversion film covering a front surface and side surfaces of the first electrode film; a first conductive film covering a light-receiving surface and side surfaces of the first photoelectric conversion film; an insulation film covering an area of the first conductive film which corresponds to the side surfaces of the first photoelectric conversion film; a second photoelectric conversion film covering the main portion of an area of the first conductive film which corresponds to the light-receiving surface of the first photoelectric conversion film; and a second conductive film covering a light-receiving surface and side surfaces of the second photoelectric conversion film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
