发明名称 |
Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices |
摘要 |
Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state |
申请公布号 |
US2011310652(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US20100926404 |
申请日期 |
2010.11.16 |
申请人 |
KIM YOUNG-BAE;LEE CHANG-BUM;LEE DONG-SOO;KIM CHANG-JUNG;LEE MYOUNG-JAE;CHANG MAN;LEE SEUNG-RYUL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM YOUNG-BAE;LEE CHANG-BUM;LEE DONG-SOO;KIM CHANG-JUNG;LEE MYOUNG-JAE;CHANG MAN;LEE SEUNG-RYUL |
分类号 |
G11C11/00;H01C7/10 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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