摘要 |
Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate. |
申请人 |
APPLIED MATERIALS, INC.;CHENG, SIU F.;JANZEN, JACOB;PADHI, DEENESH;KIM, BOK HOEN |
发明人 |
CHENG, SIU F.;JANZEN, JACOB;PADHI, DEENESH;KIM, BOK HOEN |