| 摘要 |
PURPOSE: A semiconductor device and a formation method thereof are provided to strengthen a storage electrode sacrificing layer structure by including a nitride film which is located in a same height with a peripheral circuit bit line and eliminating level difference between a peripheral circuit region and a cell region. CONSTITUTION: An element isolation film(14) which defines an active region(12) is formed on a semiconductor substrate(10). A buried gate(20) which is buried in the lower side of a substrate is formed in the active region and the element isolation film. The buried gate comprises a recess(22), a gate electrode(24), and a capping layer(26). A cell bit line(30) comprises a bit line electrode(34) and a bit line spacer(38) which includes a conducting material. An inter-layer insulating film(52) is included on the top of a peripheral circuit gate(40) as a prescribed thickness.
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