| 摘要 |
<p>The invention concerns an image sensor comprising an array of pixels, each pixel comprising: a photodiode coupled between a first reference voltage and a first switch, said first switch operable to connect said photodiode to a first node (308); a capacitor (322) arranged to store a charge accumulated by said photodiode, said capacitor being coupled between a second reference voltage and a second node (321); a second switch coupled between said first and second nodes, said second switch being operable to connect said capacitor to said first node; and read circuitry for reading the voltage at said second node, wherein said photodiode is formed in a first P-type region (402) and said second switch comprises a first transistor formed in a second P-type region (404), said first and second P-type regions having different doping levels.</p> |
