| 发明名称 |
High efficiency InGaAsN solar cell and method of making the same |
| 摘要 |
<p>An InGaAsN solar cell includes an InGaAsN structure having a bandgap between 1.0 eV to 1.05 eV, and a depletion region width of at least 500 nm.</p> |
| 申请公布号 |
EP2398062(A2) |
申请公布日期 |
2011.12.21 |
| 申请号 |
EP20110004787 |
申请日期 |
2011.06.10 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAN, WEI-SIN;SELLERS, IAN ROBERT;HOOPER, STEWART EDWARD;KAUER, MATTHIAS |
| 分类号 |
H01L31/0304;H01L31/078;H01L31/18 |
主分类号 |
H01L31/0304 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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