| 摘要 |
<p>The present invention provides: a semiconductor light emitting diode that improves light output power while maintaining a relatively low forward voltage by positioning an upper electrode portion as an electrode portion on the light extraction side and an intermediate electrode portion paired with the upper electrode portion in appropriate positional relationship; and a method of producing the semiconductor light emitting diode. Specifically, the present invention provides a semiconductor light emitting diode comprising: a support substrate 2; an intermediate layer 3 including an intermediate electrode portion 3a, a second conductive semiconductor layer 4, an active layer 5, a first conductive semiconductor layer 6 and an upper electrode portion 7 sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer 8 provided on the lower surface side of the support substrate 2, wherein:
the intermediate layer 3 has at least one intermediate electrode portion 3a extending linearly or in an island-like shape; and
the upper electrode portion 7 and the intermediate electrode portion 3a are disposed, in a view obtained by projecting these electrode portions 7, 3a on an imaginary plane in parallel with the upper surface of the support substrate 2, respectively, in a positional relationship that these electrode portions 7, 3a are offset from each other and a contour of at least one of the upper electrode portion 7 and the intermediate electrode portion 3a extends in a wavy winding manner with a predetermined amplitude such that an inter-contour distance d between contour lines of the upper electrode portion 7 and the intermediate electrode portion 3a facing each other partially decreases.</p> |
