发明名称 A MEMS sensor and method for fabricating the same
摘要 <p>A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer (300) to an etched device wafer (100) comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element (140) to measure absolute pressure. Interconnect channels (400) embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.</p>
申请公布号 IE20110281(A1) 申请公布日期 2011.12.21
申请号 IE20110000281 申请日期 2011.06.16
申请人 GENERAL ELECTRIC COMPANY 发明人 SISIRA KANKANAM GAMAGE;NARESH VENKATA MANTRAVADI;MICHAEL KLITZKE;TERRY LEE COOKSON
分类号 B81B7/00;B81C1/00;G01V1/00;G01V3/00 主分类号 B81B7/00
代理机构 代理人
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