EXTREME ULTRA VIOLET MASK AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: An extreme ultra violet(EUV) mask and a formation method thereof are provided to insert a penetration pattern within an absorption layer pattern of the EUV mask, thereby improving the intensity of a pattern in a patterning process. CONSTITUTION: A reflection layer(110) is arranged in the upper part of a quartz substrate(100). The reflection layer is arranged by laminating molybdenum(110a) and silicon(110b). An absorption layer pattern(120) is arranged in the upper part of the reflection layer. A plurality of penetration patterns(130) is arranged within the absorption layer pattern. The penetration pattern is arranged in a direction perpendicular to a longitudinal direction of the absorption layer pattern.