发明名称 METHOD FOR FABRICATING ORGANIC THIN FILM TRANSISTOR
摘要 PURPOSE: A manufacturing method of an organic thin film transistor is provided to arrange an organic active layer by evaporating pentacene in two steps with different substrate temperature and evaporation speed, thereby improving performance of the organic thin film transistor according to a crystalline property of an organic active material. CONSTITUTION: An electrode material is evaporated on a substrate(10) arranged with a transparent insulated material. A gate wiring and gate electrode(20) are arranged on the substrate. An SiO2 gate insulating layer(21) covering the gate electrode is evaporated on the entire region of the substrate. A source(30) and drain(40) electrodes are arranged on the SiO2 gate insulating layer. An organic active layer is arranged in a stepwise way by evaporating pentacene using a shadow mask vacuum deposition method.
申请公布号 KR20110136607(A) 申请公布日期 2011.12.21
申请号 KR20100056728 申请日期 2010.06.15
申请人 LG ELECTRONICS INC. 发明人 KIM, JEONG HO;JANG, SOO WOOK
分类号 H01L51/10;H01L51/30 主分类号 H01L51/10
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